Physics of Semiconductor Devices
半导体器件物理
Author: Massimo Rudan
原文地址：https://www.zhisci.com/pdfshow/17700
This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of some basic fabrication steps, and to measuring methods for the semiconductor-device parameters.
这本书描述了半导体的基本物理，包括传输模型的层次结构，并将理论与实际半导体器件的功能联系起来。在保持概念的内在一致性和解释各种近似水平的同时，细节被仔细地计算出来，并从基础物理中推导出来。由于硅在工业上的重要性，示例以硅为基础。包括几个章节，为读者提供了理解晶体输运性质所必需的量子力学概念。描述了含有位置依赖杂质分布的晶体的行为，并导出了半导体器件的不同层次传输模型（从Boltzmann输运方程到流体动力学和漂移扩散模型）。然后详细介绍了双极型半导体器件的结构模型。最后几章介绍了一些基本的制作步骤，以及半导体器件参数的测量方法。
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